发明名称 |
Methods of forming capacitors |
摘要 |
Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.
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申请公布号 |
US8528175(B2) |
申请公布日期 |
2013.09.10 |
申请号 |
US201113339692 |
申请日期 |
2011.12.29 |
申请人 |
ANTONOV VASSIL;BHAT VISHWANATH;CARLSON CHRIS M.;MICRON TECHNOLOGY, INC. |
发明人 |
ANTONOV VASSIL;BHAT VISHWANATH;CARLSON CHRIS M. |
分类号 |
H01G7/00 |
主分类号 |
H01G7/00 |
代理机构 |
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地址 |
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