| 摘要 |
An OLED(Organic Light Emitting Diode) display and an LCD(Liquid Crystal Display) are provided to control the amount of catalytic metal atoms remaining within a silicon layer by performing a gettering process of eluting the catalytic metal atoms, penetrated into the silicon layer, to the surface of a oxide film or within the oxide film and removing the eluted catalytic meta atoms after performing first crystallization heat processing at a lower temperature, thereby manufacturing poly silicon having superior device characteristics. A poly silicon forming method comprises the following steps of: forming an amorphous silicon layer on a substrate(ST1); forming a catalytic metal layer on the amorphous silicon layer(ST2); performing first crystallization heat processing of the substrate, where the catalytic metal layer and the amorphous silicon layer are formed, at a first temperature as a low temperature(ST3); performing a gettering process for removing a part of catalytic metal atoms penetrated into an upper surface of the amorphous silicon layer by diffusion(ST4); and performing second crystallization heat processing of the amorphous silicon layer at a second temperature higher than the first temperature(ST5). |
