SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor field effect transistor and a manufacturing method thereof are provided. The semiconductor field effect transistor can include: a gate wall; a fin portion located outside of the gate wall, two ends of the fin portion connected to the source and drain regions in the two ends of the fin portion; a contact wall located at two sides of the gate wall, the contact wall connected with the source and drain regions via the silicide layer under the contact wall; the gate wall with air gap. Since air gap is around the gate wall, it reduces the parasitic capacitance between the gate wall and the contact wall especially for the air gap between them. Thus, it relieves too large parasitic capacitance for use of the contact wall effectively.