| 摘要 |
<p>In the present invention, a sensor unit (33) is provided to the top center section of a semiconductor substrate (32) such as an Si substrate. Also, a circuit section (34) is provided to the top surface of the semiconductor substrate (32) in a manner so as to encircle the sensor unit (33). The top surface of the circuit section (34) is covered by an insulating coating layer (45) comprising SiO2. Furthermore, a protective film (41) of the sensor unit (33) also spreads to the circuit section (34), and covers the top of the circuit section (34) from above the insulating coating layer (45). Also, nearly the entire top of the circuit section (34) is covered by a metal protective film (46) provided to the top of the protective film (41).</p> |
