发明名称 Method of Manufacturing Solar Cell
摘要 <p>PURPOSE: A method for manufacturing a solar cell is provided to prevent detects due to chlorine on the interface of an intrinsic silicon layer and a second doping silicon layer. CONSTITUTION: A first doping silicon layer is formed by using dichlorosilane gas (S110). A hydrogen plasma process is performed on the first doping silicon layer (S120). An intrinsic silicon layer is formed on the first doping silicon layer by using silane gas (S130). A second doping silicon layer is formed on the intrinsic silicon layer by using the silane gas (S140). A third doping silicon layer is formed on the second doping silicon layer by using the dichlorosilane gas (S150). A transparent electrode layer is formed on the third doping silicon layer (S160). A collection electrode is formed on the transparent electrode layer (S170). [Reference numerals] (AA) Start; (BB) End; (S110) First doping silicon layer is formed by using dichlorosilane gas; (S120) Hydrogen plasma process is performed on the first doping silicon layer; (S130) Intrinsic silicon layer is formed on the first doping silicon layer by using silane gas; (S140) Second doping silicon layer is formed on the intrinsic silicon layer by using the silane; (S150) Third doping silicon layer is formed on the second doping silicon layer by using the dichlorosilane gas; (S160) Transparent electrode layer is formed on the third doping silicon layer; (S170) Collection electrode is formed on the transparent electrode layer</p>
申请公布号 KR101302373(B1) 申请公布日期 2013.09.06
申请号 KR20110138771 申请日期 2011.12.21
申请人 发明人
分类号 H01L31/075;H01L31/04;H01L31/042;H01L31/18 主分类号 H01L31/075
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