发明名称 |
Semiconductor Devices and Methods of Fabricating the Same |
摘要 |
A semiconductor device includes capacitors connected in parallel. Electrode active portions and a discharge active portion are defined on a semiconductor substrate, and capping electrodes are disposed respectively on the electrode active portions. A capacitor-dielectric layer is disposed between each of the capping electrodes and each of the electrode active portions that overlap each other. A counter doped region is disposed in the discharge active portion. A lower interlayer dielectric covers the entire surface of the semiconductor substrate. Electrode contact plugs respectively contact the capping electrodes through the lower interlayer dielectric, and a discharge contact plug contacts the counter doped region through the lower interlayer dielectric. A lower interconnection is disposed on the lower interlayer dielectric and contacts the electrode contact plugs and the discharge contact plug.
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申请公布号 |
US2013230963(A1) |
申请公布日期 |
2013.09.05 |
申请号 |
US201313868752 |
申请日期 |
2013.04.23 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM MYOUNGSOO;CHOI YOONKYUNG;LEE EUN YOUNG;JO SUNGIL |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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