| 摘要 |
<p>A semiconductor device, comprising: a substrate; a plurality of gate finger electrodes which are arranged on the substrate; a plurality of source finger electrodes which are arranged on the substrate, each source finger electrode is close to the gate finger electrode; a plurality of drain finger electrodes which are arranged on the substrate, each drain finger electrode faces the source finger electrode via the gate finger electrode; a shield plate electrode which is arranged via an insulating layer over the drain finger electrode and the first surface of the substrate between the gate finger electrode and the drain finger electrode, is short-circuited to the source finger electrode, and shields electrically the gate finger electrode and the drain finger electrode from each other; and a slot VIA hole which is formed in the substrate under the source finger electrode and is connected to the source finger electrode.</p> |
