| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method requiring no irradiation of a silicon single crystal with neutrons, relatively broadening the range of pulling speed of a single crystal and reducing fluctuation of the resistivity in a direction of the pulling axis and fluctuation of the in-plane resistivity in a radial direction of a silicon single crystal. <P>SOLUTION: After a silicon single crystal 11 containing an n-type dopant is pulled from a quartz crucible 13, the silicon single crystal 11 having interstitial oxygen concentration of not more than 6.0&times;10<SP>17</SP>atoms/cm<SP>3</SP>, and not more than 5% of fluctuation of the in-plane resistivity in the radial direction, a silicon raw material 52 is supplied to the crucible 13 and melted, and a new silicon single crystal 11 is pulled from the quartz crucible 13. Thus, a plurality of silicon single crystals 11 are grown. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT</p> |
