| 摘要 |
<p>A memory cell section includes a first wiring (27) which is extended in a first direction, and a second wiring (26) which is extended in a second direction different from the first direction, and a third wiring (19a) which is disposed between the first and second wirings (27, 26), and a first magneto resistive effect element (25a) which is disposed at an intersection of the first and second wirings (27, 26) between the first and second wirings (27, 26), and is connected to the second and third wirings (26, 19a). Further, a peripheral circuit section includes a fourth wiring (19b), and a fifth wiring (20b) which is disposed above the fourth wiring (19b), and a second magneto resistive effect element (25b) which is disposed between the fourth and fifth wirings (19b, 20b) and is connected to the fourth and fifth wirings (19b, 20b) to be used as a resistive element (30).</p> |
