| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide sufficient sensitivity by improving quantum efficiency, and to improve performance of a quantum dot photodetector, in a quantum dot photodetector. <P>SOLUTION: The quantum dot photodetector includes: a columnar quantum dot layer 2 including a plurality of quantum dot layers 5 each including quantum dots 5A and a first embedding layer 5B for embedding the quantum dots 5A therein, wherein the quantum dots 5A included in the plurality of respective quantum dot layers 5 are aligned in the lamination direction to form columnar quantum dots 2A; two electrode layers 3 sandwiching the columnar quantum dot layer 2; and a carrier supplying quantum dot layer 4 formed between the columnar quantum dot layer 2 and the carrier supply-side electrode layer 3A out of the two electrode layers 3, contacting the carrier supply-side electrode layer 3A, and including carrier-supplying quantum dots 4A doped with impurities, and a second embedding layer 4B for embedding the carrier-supplying quantum dots 4A. <P>COPYRIGHT: (C)2011,JPO&INPIT |
