| 摘要 |
PURPOSE: Methods for manufacturing a ferroelectric thin film and a planar structure device are provided to have excellent dielectric properties by optimizing an emission condition of an excimer laser. CONSTITUTION: A preliminary amorphous ferroelectric thin film(22) is formed on a substrate(10). The thickness of the preliminary amorphous ferroelectric thin film is more than 50nm. The preliminary amorphous ferroelectric thin film includes one or more selected from Ba, Sr, Pb, Ca, La, K, Na, Ti, Zr, Nb, Ta and Fe. An excimer laser is emitted to the preliminary amorphous ferroelectric thin film. |
