ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT

摘要

PURPOSE: An electrostatic discharge (ESD) protection circuit is provided to improve current driving capability by forming a lateral thyristor in a bipolar transistor. CONSTITUTION: An N buried region is formed on a substrate. A dip N well is formed on the N buried region. A first sink region (30) is formed on the left side of the dip N well. A first N well (50) is formed within the dip N well. A P well (60) is formed within the dip N well. [Reference numerals] (AA,CC) Positive terminal; (BB) Negative terminal