| 摘要 |
PROBLEM TO BE SOLVED: To provide an MOVPE growth method of a compound semiconductor, which is capable of suppressing deterioration in characteristics of a compound semiconductor solar cell.SOLUTION: The MOVPE growth method of a compound semiconductor comprises the steps of: growing an InGaAs layer or an InGaP layer by an MOVPE method; thereafter growing an InGaP thin-film layer or an InGaAs thin-film layer by supplying a gas only for a short time; keeping a substrate temperature constant; and thereafter growing an InGaP layer or an InGaAs layer. |
