| 摘要 |
PROBLEM TO BE SOLVED: To enable formation of a diode structure having reduce parasitic resistance.SOLUTION: A semiconductor element comprises: a first semiconductor layer 101 which is composed on an n-type nitride semiconductor and in which a principal surface is a C-plane; a second semiconductor layer 102 which is composed of a nitride semiconductor having a grating constant different from that of the first semiconductor layer 101 and in which the principal surface is a C-plane and which is formed on the first semiconductor layer 101 and has a critical film thickness or less; and a buffer layer (third semiconductor layer) 103 which is composed of a nitride semiconductor having a grating constant different from that of the second semiconductor layer 102 and low-density p-type lower than a density of the first semiconductor layer 101. The principal surface of each semiconductor layer is group III polar. |
