发明名称 |
METHODS FOR ETCHING OXIDE LAYERS USING PROCESS GAS PULSING |
摘要 |
Methods for etching an oxide layer disposed on a substrate through a patterned layer defining one or more features to be etched into the oxide layer are provided herein. In some embodiments, a method for etching an oxide layer disposed on a substrate through a patterned layer defining one or more features to be etched into the oxide layer may include: etching the oxide layer through the patterned layer using a process gas comprising a polymer forming gas and an oxygen containing gas to form the one or more features in the oxide layer; and pulsing at least one of the polymer forming gas or the oxygen containing gas for at least a portion of etching the oxide layer to control a dimension of the one or more features.
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申请公布号 |
US2013224960(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
US201113882272 |
申请日期 |
2011.10.27 |
申请人 |
PAYYAPILLY JAIRAJ;KIM JONG MUN;DOAN KENNY;LING LI;APPLIED MATERIALS, INC. |
发明人 |
PAYYAPILLY JAIRAJ;KIM JONG MUN;DOAN KENNY;LING LI |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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