| 摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment device capable of preventing a substrate from cracking when the substrate is irradiated with flash light.SOLUTION: A semiconductor wafer W supported from a rear surface thereof by a lift pin 12 is heated by irradiating a surface of the semiconductor wafer W with flash light from a flash lamp. A regulation ring 30 of transparent quartz is arranged in contact with or in proximity to a peripheral edge of the surface of the semiconductor wafer W, and the surface of the semiconductor wafer W is irradiated with flash light in this state. Even if a surface temperature of the semiconductor wafer W rises rapidly when the surface of the wafer is irradiated with flash light, the regulation ring 30 can suppress jump of the semiconductor wafer W from the lift pin 12. This prevents a wafer crack caused by jump of the semiconductor wafer W when the surface of the wafer is irradiated with flash light. |
