SEMICONDUCTOR-DEVICE MANUFACTURING METHOD, STORAGE MEDIUM, AND SEMICONDUCTOR DEVICE

摘要

A semiconductor-device manufacturing method having the following steps: a step in which a second conductive layer is formed on top of an underlayer that has an insulating layer in which a recess is formed and a first conductive layer that is exposed at the bottom of said recess; a step in which a third conductive layer is formed on top of the aforementioned second conductive layer; a step in which a material that is capable of forming a solid solution with the third conductive layer is deposited onto said third conductive layer; and a step in which the third conductive layer with the aforementioned solid-solution-forming material deposited thereon is heated.