| 摘要 |
<p>PURPOSE: A double gate horizontal type metal oxide semiconductor field effect transistor (MOSFET) is provided to deliver more currents per unit area by supplying a short channel between a drain and a source. CONSTITUTION: A first area of second conductivity is formed on a board (103). A body area (122) of first conductivity is formed in the first area. An isolation area (104) is formed in the first area. A second area of the second conductivity is formed in the first area. A third area of the second conductivity is formed in the first area.</p> |
