| 摘要 |
PURPOSE: A defect measurement method for a wafer is provided to accurately measure defect density on the entire area of the wafer. CONSTITUTION: A specific point is photographed by using a visual information acquisition method(S11). Defect density is measured on the image of the photographed specific point(S12). An X-ray diffraction apparatus is operated using an XRD method(S21). The FWHM(Full Width at Half Maximum) of a preset range including the specific point is measured(S22). The correlation of the defect density and the FWHM, and the defect density of the wafer are calculated(S30). [Reference numerals] (S11) Photograph; (S12) Measure defect density; (S21) Operate an X-ray diffraction apparatus; (S22) Measure FWHM; (S30) Derive a correlation and calculation the defect density |
