TWO-STEP WET TEXTURING PRODUCTION METHOD USING METAL ULTRA THIN FILM

摘要

PURPOSE: A texturing method of a silicon wafer is provided to increase the number of electrons by forming an embossing pattern on the surface of a substrate. CONSTITUTION: A primary texturing process is performed (S2). The surface of a silicon wafer is processed by alkali solution. A metal film is formed on the surface of the silicon wafer (S3). A secondary texturing process is performed (S4). The surface of the silicon wafer is process with an acid solution. [Reference numerals] (S1) Si wafer; (S2) Primary texturing(alkali texturing(pyramid structure formation); (S3) Metal film formation; (S4) Secondary texturing(wet texturing); (S5) Nanopattern formation process