| 摘要 |
A storage device according to one embodiment includes memory cells which are connected in series in a first direction and are arranged in a matrix by the arranged series connections, and word lines which connect control gates of the memory cells in a second direction perpendicular to the first direction, in which a first interval and a second interval wider than that are alternately repeated for intervals in the second direction between the memory cells. The storage device according to the embodiment comprises a drive unit for writing data in a first cell, then writing data in a second cell which is connected to the same word line as the first cell and is spaced at the first interval in the second direction, then reading the data in the second cell, and reading the data in the first cell with correction based on the read value of the second cell.
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