THIN FILM TRANNSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
摘要
<p>PURPOSE: A thin film transistor array panel and a manufacturing method thereof are provided to improve the electrical connection between a layer exposed by a contact hole and a layer formed on a protection member by forming the protection member consisting of a transparent conduction material. CONSTITUTION: A first protection layer (180x) is arranged on a thin film transistor. A second protection layer (180y) includes an organic insulating material. A third protection layer (180z) is formed on a first field generation electrode. A second field generation electrode (191) is formed on a third protection layer. A first protection member (83) and the first field generation electrode are formed on the same layer.</p>
申请公布号
KR20130094554(A)
申请公布日期
2013.08.26
申请号
KR20120015901
申请日期
2012.02.16
申请人
SAMSUNG DISPLAY CO., LTD.
发明人
RYU, HYE YOUNG;BYEON, HEE JUN;LEE, WOOG EUN;YOON, KAP SOO;KIM, YOON HO;BYUN, CHUN WON