发明名称 METAL BONDING METHOD AND METAL BONDED STRUCTURE
摘要 The gap between first and second bonding portions is filled with a disperse solution obtained by dispersing copper micro-particles into a solution for copper oxide elution, so as to elute copper oxide configured as the outermost layer of the first bonding portion and copper oxide configured as the outermost layer of the second bonding portion, and copper oxide formed on the surface of each copper micro-particle. Pressure is applied to the first and second bonding portions using a press machine so as to raise the pressure of the disperse solution. At the same time, heat is applied under a relatively low temperature condition of 200° C. to 300° C., so as to remove the components contained in the disperse solution except for copper, thereby depositing copper. Thus, a first base portion and a second base portion are bonded via a copper bonded portion containing copper derived from the copper micro-particles.
申请公布号 US2013216302(A1) 申请公布日期 2013.08.22
申请号 US201313771031 申请日期 2013.02.19
申请人 SANYO ELECTRIC CO., LTD.;SANYO ELECTRIC CO., LTD. 发明人 YANASE YASUYUKI;SAITO KOICHI;KOHARA YASUHIRO
分类号 B23K1/20 主分类号 B23K1/20
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