| 摘要 |
A deposition method and system for producing a photovoltaic cell is provided. The method includes maintaining a sub-atmospheric pressure within a reaction chamber during at least a portion of the deposition of the semiconductor material. The distance D separating the first and second electrodes is expressed in mm, and is greater than or equal to about 10 mm but less than or equal to about 30 mm. A concentration of the semiconductor-containing gas in the process gas of at least fifty (50%) percent by volume is established during at least a portion of the deposition of the semiconductor material. |
