发明名称 SILICON SENSING STRUCTURE TO DETECT THROUGH-PLANE MOTION A PLANE OF MATERIAL WITH THERMAL EXPANSION SUBSTANTIALLY DIFFERENT FROM THAT OF SILICON
摘要 <p>A pressure transducer is provided that has a transducer body with a rim, a diaphragm that deflects in response to pressure and a sensor bonded to the diaphragm at the rim and at a center of the diaphragm. The sensor detects deflection of the metal diaphragm. The sensor and diaphragm are made of different materials. A thermal expansion difference between the sensor and the diaphragm is accommodated by flexures in the sensor that accept relative motion in a radial direction of the metal diaphragm with little effect on a sensitivity of the silicon structure to motion in an axial direction of the diaphragm.</p>
申请公布号 EP2201346(B1) 申请公布日期 2013.08.21
申请号 EP20080833442 申请日期 2008.09.29
申请人 MEGGITT (SAN JUAN CAPISTRANO), INC. 发明人 SUMINTO, JAMES, TJAN-MENG;WILNER, LESLIE, BRUCE
分类号 G01L9/02;G01L9/00;G01L19/04 主分类号 G01L9/02
代理机构 代理人
主权项
地址