| 发明名称 |
Structure and method to improve threshold voltage of MOSFETs including a high k dielectric |
| 摘要 |
Threshold voltage controlled semiconductor structures are provided in which a conformal nitride-containing liner is located on at least exposed sidewalls of a patterned gate dielectric material having a dielectric constant of greater than silicon oxide. The conformal nitride-containing liner is a thin layer that is formed using a low temperature (less than 500° C.) nitridation process.
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| 申请公布号 |
US8513085(B2) |
申请公布日期 |
2013.08.20 |
| 申请号 |
US201213409693 |
申请日期 |
2012.03.01 |
| 申请人 |
FANG SUNFEI;GREENE BRIAN J.;LEOBANDUNG EFFENDI;LIANG QINGQING;MACIEJEWSKI EDWARD P.;WANG YANFENG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FANG SUNFEI;GREENE BRIAN J.;LEOBANDUNG EFFENDI;LIANG QINGQING;MACIEJEWSKI EDWARD P.;WANG YANFENG |
| 分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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