发明名称 |
Nonvolatile data storage, semicoductor memory device including nonvolatile data storage and method of forming the same |
摘要 |
A data storage and a semiconductor memory device including the same are provided, the data storage including a lower electrode, a first discharge prevention layer stacked on the lower electrode, a phase-transition layer on the first discharge prevention layer, a second discharge prevention layer stacked on the phase-transition layer, and an upper electrode stacked on the second discharge prevention layer. The phase transition layer includes oxygen and exhibits two different resistance characteristics depending on whether an insulating property thereof changed. The first and second discharge prevention layers block discharge of the oxygen from the phase transition layer.
|
申请公布号 |
US8513634(B2) |
申请公布日期 |
2013.08.20 |
申请号 |
US20090457539 |
申请日期 |
2009.06.15 |
申请人 |
LEE JUNG-HYUN;PARK SUNG-HO;LEE MYOUNG-JAE;PARK YOUNG-SOO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JUNG-HYUN;PARK SUNG-HO;LEE MYOUNG-JAE;PARK YOUNG-SOO |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|