SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which can achieve greater channel mobility.SOLUTION: A silicon carbide semiconductor device 100 comprises: an insulation film 126; and a silicon carbide layer 109 having a surface covered with the insulation film 126. The surface includes a first region R1. The first region R1 has a first plane direction at least partially. The first plane direction is either one of a (0-33-8) plane, a (30-3-8) plane, a (-330-8) plane, a (03-3-8) plane, a (-303-8) plane or a (3-30-8) plane.