| 摘要 |
PROBLEM TO BE SOLVED: To achieve microfabrication of a cell size and high performance of a Fin-FET.SOLUTION: A semiconductor device includes a semiconductor substrate 10, a gate electrode 20, a first semiconductor layer 25a, and a second semiconductor layer 25b. The semiconductor substrate has a substrate portion 8, a first fin portion 9a on the substrate portion, and a second fin portion 9b adjacent to the first fin portion. The gate electrode is formed by connecting side surfaces and a part of top surfaces of the first fin portion and the second fin portion in a channel region via an insulating layer. The first semiconductor layer and the second semiconductor layer are formed on the side surfaces and a part of the top surfaces of the first fin portion and the second fin portion in a source/drain region, respectively. The height of the top surface of the first fin portion is higher than that of the top surface of the second fin portion. |
