| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of suppressing increase in an occupied area.SOLUTION: A semiconductor storage device has a non-volatile memory (cell array CA part), a volatile memory (latch circuit LDL part), and a sense amplifier. The latch circuit LDL part has a lamination structure similar to that of the cell array CA part, and has a memory string configured by connecting a plurality of memory transistors in series, and first and second selection transistors whose one ends are connected to both ends of the memory string. The memory string has a semiconductor layer, a charge storage layer, and a conductive layer. The semiconductor layer extends in a vertical direction to a substrate 20. A charge storage layer 43b surrounds a lateral face of a columnar semiconductor layer 44. Word line conductive layers 41a-41d surround the lateral face of the columnar semiconductor layer via the charge storage layer. A predetermined fixed potential is supplied to gates of the memory transistors of the latch circuit LDL part. A memory semiconductor layer 44A functions as a capacitor. A semiconductor layer 53a and a source line 61 are not connected with each other. |
