| 摘要 |
Die package for a semiconductor device comprises: (a) a leadframe containing a die attach pad; (b) a conductive layer on a portion of the die attach pad, where the conductive layer has a thickness ranging up to 30 mil; (c) a boundary feature comprising a bond wire partially surrounding the conductive layer, where both ends of the bond wires are attached to the die attach pad; and (d) a die on the conductive layer. Independent claims are included for: (1) a semiconductor device comprising: (a) a leadframe; (b) a conductive layer; (c) a boundary; and (d) a die on the conductive layer; and (2) a method for making a semiconductor device. |
