METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS

摘要

Also provided is a method for manufacturing a photoelectric conversion device including: a first process where a plurality of pixel electrodes 104 are formed on a dielectric layer 102; a second process where a light receiving layer 107 that includes an organic material is formed on the plurality of pixel electrodes 104; and a third process where a counter electrode 108 is formed on the light receiving layer 107, in which the first process comprises: a film forming process of a pixel electrode material on the dielectric layer 102; a patterning process of the film of the pixel electrode material; and a heating process for heating the substrate at 270° C. after the patterning process.