DOPING METHOD OF ATOMIC LAYER DEPOSITION

摘要

A doping method of atomic layer deposition includes providing a substrate in a reaction chamber; and performing at least one atomic layer deposition cycle to form a film on a surface of the substrate. The atomic layer deposition cycle includes passing first precursors into the reaction chamber to let first atoms included in the first precursors combine with reaction sites of the substrate; and passing second precursors into the reaction chamber to let second atoms included in the second precursors combine with the reaction sites uncombined with the first atoms or substitute at least part of the first atoms to combine with the reaction sites of the substrate. The above-mentioned doping method of atomic layer deposition is capable of preparing large area and uniformity of doping film without annealing process or with low temperature annealing process.