发明名称 |
FLASH MEMORY AND METHOD FOR FABRICATING THE SAME |
摘要 |
A flash memory and a method for fabricating the same are provided. The flash memory comprises: a semiconductor substrate; a storage medium layer formed on the semiconductor substrate and comprising from bottom to top: a tunneling oxide layer, a silicon nitride layer and a blocking oxide layer; a semiconductor layer formed on the storage medium layer and comprising a channel region and a source region and a drain region located on both sides of the channel region respectively; and a gate stack formed on the channel region and comprising a gate dielectric and a gateformed on the gate dielectric.
|
申请公布号 |
US2013207173(A1) |
申请公布日期 |
2013.08.15 |
申请号 |
US201213514591 |
申请日期 |
2012.05.22 |
申请人 |
CUI NING;LIANG RENRONG;WANG JING;XU JUN |
发明人 |
CUI NING;LIANG RENRONG;WANG JING;XU JUN |
分类号 |
H01L29/788;H01L21/20 |
主分类号 |
H01L29/788 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|