发明名称 NANOSCALE, ULTRA-THIN FILMS FOR EXCELLENT THERMOELECTRIC FIGURE OF MERIT
摘要 A thermoelectric structure including a thermoelectric material having a thickness less than 50 nm and a semi-insulating material in electrical contact with the thermoelectric material. The thermoelectric material and the semi-insulating materials have an equilibrium Fermi level, across a junction between the thermoelectric material and the semi-insulating material, which exists in a conduction band or a valence band of the thermoelectric material. The thermoelectric structure is for thermoelectric cooling and thermoelectric power generation.
申请公布号 WO2013119293(A2) 申请公布日期 2013.08.15
申请号 WO2012US65829 申请日期 2012.11.19
申请人 RESEARCH TRIANGLE INSTITUTE 发明人 VENKATASUBRAMANIAN, RAMA;BARLETTA, PHILLIP;QUILLIAMS, BRYSON;DEZSI, GEZA;COLPITTS, THOMAS;BULMAN, GARY;STUART, JUDY
分类号 H01L35/28;H01L35/16;H01L35/18;H01L35/22 主分类号 H01L35/28
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