发明名称 |
NANOSCALE, ULTRA-THIN FILMS FOR EXCELLENT THERMOELECTRIC FIGURE OF MERIT |
摘要 |
A thermoelectric structure including a thermoelectric material having a thickness less than 50 nm and a semi-insulating material in electrical contact with the thermoelectric material. The thermoelectric material and the semi-insulating materials have an equilibrium Fermi level, across a junction between the thermoelectric material and the semi-insulating material, which exists in a conduction band or a valence band of the thermoelectric material. The thermoelectric structure is for thermoelectric cooling and thermoelectric power generation. |
申请公布号 |
WO2013119293(A2) |
申请公布日期 |
2013.08.15 |
申请号 |
WO2012US65829 |
申请日期 |
2012.11.19 |
申请人 |
RESEARCH TRIANGLE INSTITUTE |
发明人 |
VENKATASUBRAMANIAN, RAMA;BARLETTA, PHILLIP;QUILLIAMS, BRYSON;DEZSI, GEZA;COLPITTS, THOMAS;BULMAN, GARY;STUART, JUDY |
分类号 |
H01L35/28;H01L35/16;H01L35/18;H01L35/22 |
主分类号 |
H01L35/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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