| 摘要 |
PROBLEM TO BE SOLVED: To provide a sapphire single crystal growing apparatus with few commingling of impurities into the sapphire single crystal to be grown although the apparatus is configured relatively inexpensively.SOLUTION: An afterheater member 20 is arranged above a crucible 10, generates heat together with the crucible 10 by passing an electric current through an induction coil 32 to heat a sapphire single crystal body 15 pulled from the crucible 10. The afterheater member 20 is equipped with an exothermic part 22 comprising at least one kind of tantalum (Ta), tungsten (W) and molybdenum (Mo) as a main component, and a coating layer 24 free of oxygen and coating the exothermic part 22. With such configuration, the exothermic part 22 is prevented from oxidation while the exothermic part 22 is composed of relatively inexpensive high melting point metals. |
