| 摘要 |
<p>An object of the present invention is to provide a method for producing a compound semiconductor device wafer, which method enables cleaving of a wafer with precision and at remarkably high yield, attains high process speed, and improves productivity. The inventive method for producing a compound semiconductor device wafer, the wafer including a substrate and a plurality of compound semiconductor devices provided on the substrate and arranged with separation zones being disposed between the compound semiconductor devices, comprises a step of forming separation grooves, through laser processing, on the top surface of the substrate (i.e., surface on the compound semiconductor side) at the separation zones under the condition that a compound semiconductor layer is present on the top surface of the substrate.</p> |
