| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element, having high output and long lifetime, wherein the COD is less likely to takes place at a resonator end face. SOLUTION: The film density of an AR coat film 18, formed on at least the laser beam emission end face 16 among coat films formed on the resonator end face of the nitride semiconductor layer element 10, is selected to be 3/4 of the ideal density of a material forming the AR coat film 18 or over. Thus, mutual diffusion and interaction of atoms between the resonator end face and the end face coat film can be suppressed; and high COD tolerance, high output, and long lifetime can be provided to the nitride semiconductor laser element 10. COPYRIGHT: (C)2007,JPO&INPIT |
