| 摘要 |
A photoelectric conversion device in accordance with an aspect of the present invention includes a thin-film transistor formed on a substrate, and a photo diode electrically connected to the thin-film transistor, wherein the photo diode includes a lower electrode connected to a drain electrode of the thin-film transistor, a photoelectric conversion layer formed on the lower electrode, an upper electrode formed from a transparent conductive film on the photoelectric conversion layer, the upper electrode being formed so as to be contained within an upper surface of the photoelectric conversion layer as viewed from a top, and a protective film (compound layer or the like) formed so as to protect a part of an upper surface of the photoelectric conversion layer located outside the upper electrode.
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