发明名称 |
Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method |
摘要 |
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method. |
申请公布号 |
US8507194(B2) |
申请公布日期 |
2013.08.13 |
申请号 |
US12871969 |
申请日期 |
2010.08.31 |
申请人 |
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发明人 |
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分类号 |
G03F0007/000039;G03F0007/000030;G03F0007/000032 |
主分类号 |
G03F0007/000039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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