发明名称 |
SCHOTTKY BARRIER FORMATION |
摘要 |
A method for Schottky barriers formation using laser radiation consists in preliminary application of metal salts to a barrier formation area on the surface of semiconductor material; the metal has electron work function providing formation of a rectifying contact with the semiconductor; thereafter, said region is processed by pulse laser radiation having energy providing heat anneal of the semiconductor material, with simultaneous application of electric field between the salt solution and semiconductor material. |
申请公布号 |
UA82724(U) |
申请公布日期 |
2013.08.12 |
申请号 |
UA20130002481U |
申请日期 |
2013.02.27 |
申请人 |
YURII FEDKOVYCH CHERNIVTSI NATIONAL UNIVERSITY |
发明人 |
HRYTSIUK BOHDAN MYKOLAIOVYCH;NICHYI SERHII VASYLIOVYCH;POLITANSKYI LEONID FRANYTSOVYCH |
分类号 |
H01L23/32 |
主分类号 |
H01L23/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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