发明名称 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To promptly rise and lower a temperature of a substrate when a peripheral portion of the substrate is processed with a process liquid.SOLUTION: A substrate processing apparatus includes: a substrate holding part (16) holding a substrate (W); a first process liquid nozzle (61) supplying a first process liquid to a peripheral portion of the substrate; a second process liquid nozzle (62) supplying a second process liquid, having a temperature lower than that of the first process liquid, to the peripheral portion of the substrate; first gas supply means (51, 53, etc.) supplying first gas having a first temperature to the peripheral portion of the substrate; and a second gas supply means (42, 45, etc.) supplying second gas having a second temperature lower than the first temperature to the center side of the substrate in a radius direction relative to a first gas supply position.
申请公布号 JP2013153135(A) 申请公布日期 2013.08.08
申请号 JP20120243723 申请日期 2012.11.05
申请人 TOKYO ELECTRON LTD 发明人 NANBA HIROMITSU;FITRIANTO;TOKUNAGA YOICHI;AMANO YOSHIFUMI
分类号 H01L21/304;H01L21/306 主分类号 H01L21/304
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