| 摘要 |
<p>The present invention includes a step for diffusing an impurity element on a surface of a silicon-based substrate (11) and forming an impurity diffusion layer (15), and an etching step for removing the impurity diffusion layer in at least a portion of a first side of the silicon-based substrate, the etching step including an etching fluid supply step for supplying an etching fluid (33) for flowing from a supply position to an edge of the silicon-based substrate, and an air supply step for supplying air (34) to a second side opposite the first side of the silicon-based substrate, in the same direction as the etching fluid and in conjunction with the supplying of the etching fluid in the etching fluid supply step.</p> |
