POLYMERIZABLE TERTIARY ESTER COMPOUND, POLYMERIC COMPOUND, RESIST MATERIAL, AND PATTERNING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a polymerizable ester compound useful as a monomer for a base resin of a resist material having a high resolution and a reduced pattern edge roughness in photolithography using a high energy beam such as an ArF excimer laser light as a light source, especially in immersion lithography, and to provide a polymeric compound containing the polymer of the ester compound, a resist material containing the polymeric compound as a base resin, and a patterning method using the resist material.SOLUTION: An objective compound is a polymerizable tertially ester compound represented by general formula (1a) or (1b).