| 摘要 |
A semiconductor device includes a semiconductor layer (20) on a substrate (10), a gate electrode (40) electrically insulated from the semiconductor layer (20) by a gate insulating layer (30), an insulating layer (50) on the gate insulating layer (30) and on the gate electrode (40), and a source electrode (60a) and a drain electrode (60b) on the insulating layer (50), the source and drain electrode (60a, 60b) being connected to the semiconductor layer (20). The source or the drain electrode (60a, 60b) overlap at least a part of the gate electrode (40). The source or the drain electrode (60a, 60b), the insulating layer (30), and the gate electrode (40) overlap each other so as to provide a capacitor (Cst). |
