| 摘要 |
<p>PURPOSE: An EUV mask is provided to reduce the reflected light within a DUV-Vis light wavelength range and EUV light wavelength range by forming a shading layer outside a mask pattern area. CONSTITUTION: A reflective mask for EUV lithography (EUVL) (10) includes a substrate (2), a reflected layer (3) which is formed on the substrate, and includes a mask pattern area (21) in which EUV light is reflected on the substrate and a mask pattern outside area (22), a mask pattern which is formed on the reflected layer and includes an area with an absorbing layer (4) which absorbs the EUV light on the reflected layer and an area without the absorbing layer, and a shading layer (6) which is formed on the mask pattern outside area and restricts the reflected light of EUV light and 190-500 nm DUV-Vis light. The reflectivity of the shading layer on the mask pattern outside area is less than 0.5% on average regarding 13.3 - 13.7 nm EUV light and less than 30% regarding 190 - 500 nm DUV-Vis light.</p> |
