发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>A technique for peeling an element manufactured through a process at relatively low temperature (lower than 500° C.) from a substrate and transferring the element to a flexible substrate (typically, a plastic film). With the use of an existing manufacturing device for a large glass substrate, a molybdenum film (Mo film) is formed over a glass substrate, an oxide film is formed over the molybdenum film, and an element is formed over the oxide film through a process at relatively low temperature (lower than 500° C.). Then, the element is peeled from the glass substrate and transferred to a flexible substrate.</p>
申请公布号 KR101293510(B1) 申请公布日期 2013.08.06
申请号 KR20070041494 申请日期 2007.04.27
申请人 发明人
分类号 H01L29/786 主分类号 H01L29/786
代理机构 代理人
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