发明名称 Photoresist-free metal deposition
摘要 Selectively accelerated or selectively inhibited metal deposition is performed to form metal structures of an electronic device. A desired pattern of an accelerator or of an inhibitor is applied to the substrate; for example, by stamping the substrate with a patterned stamp or spraying a solution using an inkjet printer. In other embodiments, a global layer of accelerator or inhibitor is applied to a substrate and selectively modified in a desired pattern. Thereafter, selective metal deposition is performed.
申请公布号 US8500985(B2) 申请公布日期 2013.08.06
申请号 US20070827800 申请日期 2007.07.13
申请人 MAYER STEVEN T.;DREWERY JOHN STEPHEN;WEBB ERIC G.;NOVELLUS SYSTEMS, INC. 发明人 MAYER STEVEN T.;DREWERY JOHN STEPHEN;WEBB ERIC G.
分类号 C25D5/34;B05D5/00;C25D5/00;C25D5/02 主分类号 C25D5/34
代理机构 代理人
主权项
地址