发明名称 |
Memory device having self-aligned cell structure |
摘要 |
Some embodiments include apparatus and methods having a memory device with diodes coupled to memory elements. Each diode may be formed in a recess of the memory device. The recess may have a polygonal sidewall. The diode may include a first material of a first conductivity type (e.g., n-type) and a second material of a second conductive type (e.g., p-type) formed within the recess.
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申请公布号 |
US8502182(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US20090367395 |
申请日期 |
2009.02.06 |
申请人 |
LIU JUN;VIOLETTE MICHAEL P.;MICRON TECHNOLOGY, INC. |
发明人 |
LIU JUN;VIOLETTE MICHAEL P. |
分类号 |
H01L47/00;G06F13/28;H01L21/311 |
主分类号 |
H01L47/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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