发明名称 |
Nonvolatile memory with faulty cell registration |
摘要 |
In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories.
|
申请公布号 |
US8503235(B2) |
申请公布日期 |
2013.08.06 |
申请号 |
US201113298548 |
申请日期 |
2011.11.17 |
申请人 |
KATAYAMA KUNIHIRO;TAMURA TAKAYUKI;WATATANI SATOSHI;INOUE KIYOSHI;SHIOTA SHIGEMASA;NAITO MASASHI;SOLID STATE STORAGE SOLUTIONS, INC. |
发明人 |
KATAYAMA KUNIHIRO;TAMURA TAKAYUKI;WATATANI SATOSHI;INOUE KIYOSHI;SHIOTA SHIGEMASA;NAITO MASASHI |
分类号 |
G11C11/34;G06F11/20;G11C7/00;G11C16/06;G11C29/00;H04L12/28 |
主分类号 |
G11C11/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|